2SC3198L גיליון נתונים, במעגל, פונקציה
2SC3198L Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| KEC(Korea Electronics) | SILICON TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
2SC3198L PDF | מינימום°C | מקסימלי°C |
- Mitsubishi Electric Semiconductor 2SC3101
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Mitsubishi Electric Electronics 2SC3102
TRANSISTOR,BJT,NPN,17V V(BR)CEO,18A I(C),SOT-160VAR - Mitsubishi Electric Semiconductor 2SC3103
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Mitsubishi Electric Semiconductor 2SC3104
EPITAXIAL PLANAR TYPE POWER TRANSISTOR) - Mitsubishi 2SC3105
EPITAXIAL PLANAR TYPE - Inchange Semiconductor Company Limited 2SC3110
Silicon Transistor - TOSHIBA[Toshiba Semiconductor] 2SC3112
TRANSISTOR AUDIO AMPLIFIER SWITCHING APPLICATIONS) - Toshiba Semiconductor 2SC311207
Silicon Epitaxial Type process) Audio Amplifier Switching Applications - 2SC3112A
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 - 2SC3112B
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92 - Toshiba Semiconductor 2SC3112_07
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications - Toshiba Semiconductor 2SC3113
TRANSISTOR AUDIO AMPLFIER SWITCHING APPLICATIONS) - 2SC3113A
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK - 2SC3113B
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK - SANYO[Sanyo Semicon Device] 2SC3114
High-VEBOAF Applications