3N169 גיליון נתונים, במעגל, פונקציה

3N169 Datasheet PDF

• MOTOROLA[Motorola, 3N100E
  TMOS POWER AMPERES 1000 VOLTS
• ETC[ETC] 3N128
  Silicon Transistor
• ETC[ETC] 3N142
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• General Electric Solid State 3N143
  Silicon Transistor
• RICOH[RICOH electronics devices division] 3N152
  PWM/VFM Step-down DC/DC Converter
• ETC[ETC] 3N153
  SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
• ETC[ETC] 3N154
  SILICON TRANSISTOR
• 3N155
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N158
  TRANSISTOR | MOSFET | P-CHANNEL | 35V V(BR)DSS | 30MA I(D) | TO-72
• 3N159
  TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 50MA I(D) | TO-72
• Intersil 3N161
  DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
• Linear Integrated Systems 3N163
  P-CHANNEL ENHANCEMENT MODE
• Linear Integrated Systems 3N163-4
  P-CHANNEL ENHANCEMENT MODE
• Linear Integrated Systems 3N164
  P-CHANNEL ENHANCEMENT MODE
• Calogic, 3N165
  Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier