CM100DY12H גיליון נתונים, במעגל, פונקציה
CM100DY12H Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) | מינימום°C | מקסימלי°C |
- MITSUBISHI[Mitsubishi Electric Semiconductor] CM100DY
HIGH POWER SWITCHING - Mitsubishi Electric Semiconductor CM100DY-12H
HIGH POWER SWITCHING INSULATED TYPE - Mitsubishi Electric Semiconductor CM100DY-24A
HIGH POWER SWITCHING - Mitsubishi CM100DY-24A09
IGBT MODULES HIGH POWER SWITCHING - Mitsubishi Electric Semiconductor CM100DY-24H
HIGH POWER SWITCHING INSULATED TYPE - MITSUBISHI[Mitsubishi Electric Semiconductor] CM100DY-24NF
HIGH POWER SWITCHING - Powerex Power Semiconductors CM100DY-28H
Dual IGBTMOD Amperes/1400 Volts - Mitsubishi CM100DY-34A
HIGH POWER SWITCHING - CM100DY12E
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) - CM100DY12H
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) - CM100DY24E
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) - CM100DY24H
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) - CM100DY28
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 100A I(C) - CM100DY28H
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.4KV V(BR)CES | 100A I(C)