IRF830AS גיליון נתונים, במעגל, פונקציה
IRF830AS Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| International Rectifier | Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
IRF830AS PDF | מינימום°C | מקסימלי°C |
- Philips Semiconductors IRF830
PowerMOS transistor Avalanche energy rated - IRF830/D
Power Field Effect Transistor - International Rectifier IRF830A
HEXFET Power MOSFET - International Rectifier IRF830AL
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) - Vishay Siliconix IRF830ALPBF
Power MOSFET - IRF830APBF
HEXFET Power MOSFET - International Rectifier IRF830AS
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) - Vishay IRF830ASPBF
Power MOSFET - Vishay Siliconix IRF830ASTRL
Power MOSFET - Vishay Siliconix IRF830ASTRLPBF
Power MOSFET - IRF830ASTRR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB - Fairchild Semiconductor IRF830B
500V N-Channel MOSFET - IRF830FI
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VAR - Suntac IRF830FP
POWER MOSFET - Vishay IRF830PBF
Power MOSFET