K4E160412D גיליון נתונים, במעגל, פונקציה
K4E160412D Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| Samsung semiconductor | 4Bit CMOS Dynamic with Extended Data |
K4E160412D PDF | מינימום°C | מקסימלי°C |
- Samsung semiconductor K4E160411D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160411D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung K4E160411D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. - Samsung semiconductor K4E160412D
4Bit CMOS Dynamic with Extended Data - Samsung K4E160412D-B
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. - Samsung K4E160412D-F
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.