K4E661612B-TL50 גיליון נתונים, במעגל, פונקציה
K4E661612B-TL50 Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| Samsung | TSOP II | 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
K4E661612B-TL50 PDF | מינימום°C | מקסימלי°C |
- Samsung semiconductor K4E661612B
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612B-L
16bit CMOS Dynamic with Extended Data - Samsung semiconductor K4E661612B-TC
16bit CMOS Dynamic with Extended Data - Samsung K4E661612B-TC45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns - Samsung K4E661612B-TC50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns - Samsung K4E661612B-TC60
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns - Samsung K4E661612B-TL45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power - Samsung K4E661612B-TL50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power