MJD112T4G גיליון נתונים, במעגל, פונקציה
MJD112T4G Datasheet PDF
| יצרן | אריזה | תיאור | טמפרטורת | |
|---|---|---|---|---|
| Semiconductor | Complementary Darlington Power Transistors |
MJD112T4G PDF | מינימום°C | מקסימלי°C |
- Semiconductor MJD112
Complementary Darlington Power Transistors - Semiconductor MJD112-001
Complementary Darlington Power Transistors - ON-Semiconductor MJD112-1
Complementary Darlington Power Transistors - Semiconductor MJD112-1G
Complementary Darlington Power Transistors - STMicroelectronics MJD11202
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - STMicroelectronics MJD11203
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Semiconductor MJD11206
Complementary Darlington Power Transistors - Motorola, MJD1121
SILICON POWER TRANSISTORS AMPERES VOLTS WATTS - Semiconductor MJD112G
Complementary Darlington Power Transistors - KEC(Korea Electronics) MJD112L
EPITAXIAL PLANAR TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) - Semiconductor MJD112RL
Complementary Darlington Power Transistors - Semiconductor MJD112RLG
Complementary Darlington Power Transistors - Motorola, MJD112T4
SILICON POWER TRANSISTORS AMPERES VOLTS WATTS - Semiconductor MJD112T4G
Complementary Darlington Power Transistors - STMicroelectronics MJD112_02
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS